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         www.rohm.com ?2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB080L-30 ?Applications ?Dimensions (Unit : mm) ?Land size figure (Unit : mm) General rectification ?Features 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF ?Structure Silicon epitaxial planer ?Structure ?Absolute maximum ratings (Ta=25 ?C) Symbol Unit VRM V Reverse voltage (DC) 30VR V Io A5 IFSM A Junction temperature 150Tj ?C Tstg ?C ?Electrical characteristics (Ta=25 ?C) Symbol Min. Typ. Max. Unit Conditions VF - - 0.51 V IF=5.0A IR - - 150 μA VR=30V Forward voltage Reverse current Storage temperature ?40 to ?150 (*1)Alumina substrate at the time of assemble 180° Half Sine Wave, Tc=100°C MAX. Parameter Average rectified forward current (*1) Forward current surge peak (60Hz?1cyc) 70 ?Taping dimensions (Unit : mm) Parameter Limits Reverse voltage (repetitive) 30 PMDS 2.0 4.2 2.0 ROHM : PMDS JEDEC : SOD-106 ① year week factory ② ① ② 1 2 0.1±0.02 0.1 2.6±0.2 2.0±0.2 5.0±0.3 1.2±0.3 4.5±0.2 1.5±0.2 4.0ɑ0.1 2.9ɑ0.1 4.0ɑ0.1 2.0ɑ0.05 倍1.55ɑ0.05 5.5 ɑ 0.05 1.75 ɑ 0.1 12 ɑ 0.2 倍1.55 9.5 ɑ 0.1 0.3 5.3 2.8MAX +0.1 -0.0 1/4 2011.12 - Rev.B |